M-серия IGBT trench-gate field-stop от STM
Серия базируется на кристаллах третьего поколения типа "Тренч". Пакуется в корпусаstandard TO-247 и TO-247 long-lead.
Ориентирована на малые общепромышленные приводы, а также, на использование в солнечных инверторах, источниках бесперебойного электропитания, сварочном оборудовании...
/прим. ред - вот не пойму, зачем в solar inverters, uninterruptible power supplies, если предполагаемая hard-switching circuits operating at up to 20 kHz?? Ведь есть IGBT "Тренч-4", которая имеет явно более высокие результаты по частоте коммутации //
Кто хочет узнать детальнее :
"This article presents the 1200V IGBT M series in third generation trench-gate field-stop technology as an excellent power device solution for the above listed applications."
Хотя параметры на первый взгляд неплохие:
STATIC AND DYNAMIC PERFORMANCE
In order to analyze how the improvements in technology translate into electrical performance of the M series IGBTs, the 40A size at 100°C (STGWA40M120DF3) results have been considered as the family champion; other sized devices belonging to the same series have the same behavior at their own nominal current.
In order to analyze how the improvements in technology translate into electrical performance of the M series IGBTs, the 40A size at 100°C (STGWA40M120DF3) results have been considered as the family champion; other sized devices belonging to the same series have the same behavior at their own nominal current.
Static (VCE(sat), ICES): The output characteristics at 25°C and 175°C are shown in Figure 3.
Fig 3 – Output characteristic of STGWA40M120DF3
The 1200V M series device shows a VCE(sat) of 1.85V at nominal collector current 25°C and 2.3V at the same current rating and 175°C. The positive temperature coefficient shown results in a negative feedback during functionality, so making the devices in M series suitable for an easier paralleling.
Another important feature of the new 1200V IGBT in trench gate field-stop technology is the low current leakage (ICES) during off-state resulting less than 100μA at 1200V up to 175°C.
и всю статью можно найти здесь первая страница:
и вторая часть тут
Fig 7 - Сравнительные характеристики потерь применительно к электроприводу небольшой мощности при токе до 30A, VBUS=600V, fsw=10kHz, PF=0.8, T=100°C.
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